NTR4501N, NVR4501N
7.0
6.0
5.0
4.0
V GS = 10 V
V GS = 2.2 V
V GS = 3.0 V
V GS = 2.0 V T J = 25 ° C
V GS = 1.8 V
8
7
6
5
V DS ≥ 10 V
4
3.0
V GS = 1.6 V
3
2.0
1.0
0
0
1
2
3
4
5
V GS = 1.4 V
V GS = 1.2 V
6 7
8
9
10
2
1
0
0.5
T J = 125 ° C
1.0
T J = 25 ° C
T J = ? 55 ° C
1.5
2.0
2.5
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.25
0.20
I D = 3.2 A
T J = 25 ° C
0.10
0.09
T J = 25 ° C
V GS = 2.5 V
0.08
0.15
0.10
0.07
0.06
V GS = 4.5 V
0.05
1
2
3
4
5
6
0.05
2
3
4
5
6
1.4
1.2
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
I D = 3.2 A
V GS = 4.5 V
1000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain
Current and Gate Voltage
V GS = 0 V
T J = 150 ° C
100
1.0
10
0.8
T J = 100 ° C
0.6
? 50
? 25
0
25
50
75
100
125
150
1.0
2
4
6
8
10
12
14
16
18
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage
Current versus Voltage
相关PDF资料
NTR4502PT1G MOSFET P-CH 30V 1.13A SOT-23
NTR4503NT3G MOSFET N-CH 30V 1.5A SOT-23
NTS2101PT1 MOSFET P-CH 8V 1.4A SOT-323
NTS4001NT1 MOSFET N-CH 30V 270MA SOT-323
NTS4101PT1 MOSFET P-CH 20V 1.37A SOT-323
NTS4172NT1G MOSFET N-CH 30V 1.6A SC70-3
NTS4173PT1G MOSFET P-CH 30V 1.2A SC70-3
NTS4409NT1G MOSFET N-CH 25V 700MA SOT-323
相关代理商/技术参数
NTR4501NT1G 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT1G-CUT TAPE 制造商:ON 功能描述:NTR Series N-Channel 20 V 70 mOhm 1.25 W Surface Mount Power MOSFET - SOT-23
NTR4501NT3 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT3G 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT3H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NTR4502P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −1.95 A, Single, P−Channel, SOT−23
NTR4502PT1 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4502PT1G 功能描述:MOSFET -30V -1.95A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube